- All sections
- H - Electricity
- H10B - Electronic memory devices
- H10B 41/41 - Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
Patent holdings for IPC class H10B 41/41
Total number of patents in this class: 190
10-year publication summary
0
|
0
|
0
|
0
|
0
|
3
|
22
|
70
|
65
|
32
|
2015 | 2016 | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 |
Principal owners for this class
Owner |
All patents
|
This class
|
---|---|---|
Samsung Electronics Co., Ltd. | 131630 |
42 |
Micron Technology, Inc. | 24960 |
31 |
Kioxia Corporation | 9847 |
25 |
SK Hynix Inc. | 11030 |
24 |
Monolithic 3D Inc. | 270 |
15 |
Yangtze Memory Technologies Co., Ltd. | 1940 |
13 |
Lodestar Licensing Group LLC | 583 |
9 |
Taiwan Semiconductor Manufacturing Company, Ltd. | 36809 |
6 |
Macronix International Co., Ltd. | 2562 |
6 |
Sandisk Technologies LLC | 5684 |
6 |
Semiconductor Energy Laboratory Co., Ltd. | 10902 |
2 |
IUCF-HYU (Industry-University Cooperation Foundation Hanyang University) | 1115 |
2 |
Intel NDTM US LLC | 373 |
2 |
Huawei Technologies Co., Ltd. | 100781 |
1 |
United Microelectronics Corp. | 3921 |
1 |
Besang, Inc. | 17 |
1 |
Silicon Storage Technology, Inc. | 678 |
1 |
Powerchip Semiconductor Manufacturing Corporation | 388 |
1 |
Infineon Technologies LLC | 597 |
1 |
Pedisem Co. Ltd. | 9 |
1 |
Other owners | 0 |